发明名称 PACKAGE SUBSTRATE, PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF
摘要 A package substrate is provided, which includes: a body having opposite first and second surfaces, each having adjacent first and second regions defined thereon; first and second circuit layers formed on the first and second surfaces of the body, respectively; a first insulating layer formed on the first surface of the body and having a plurality of first openings formed in the first insulating layer and positioned in the first and second regions; and a second insulating layer formed on the second surface of the body and having a plurality of second openings formed in the second insulating layer and positioned in the second region. Further, at least a third opening is formed in the second insulating layer and positioned in the first region to reduce the volume of the second insulating layer, thereby facilitating even distribution of thermal stresses through the first and second insulating layers during thermal cycling and hence preventing warpage of the package substrate.
申请公布号 US2016126176(A1) 申请公布日期 2016.05.05
申请号 US201514837841 申请日期 2015.08.27
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chang Tso-Chia;Hsieh Cheng-Yu;Chiang Lien-Chen;Huang Fu-Tang
分类号 H01L23/498;H01L21/48;H01L21/56;H01L23/31 主分类号 H01L23/498
代理机构 代理人
主权项 1. A package substrate, comprising: a body having opposite first and second surfaces, wherein each of the first and second surface has adjacent first and second regions defined thereon; a first circuit layer formed on the first surface of the body; a second circuit layer formed on the second surface of the body; a first insulating layer formed on the first circuit layer and the first surface of the body, wherein a plurality of first openings are formed in the first insulating layer and positioned in the first and second regions, so as to expose portions of the first circuit layer; and a second insulating layer formed on the second circuit layer and the second surface of the body, wherein a plurality of second openings are formed in the second insulating layer and positioned in the second region, so as to expose portions of the second circuit layer, and at least a third opening is formed in the second insulating layer and positioned in the first region.
地址 Taichung TW
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