| 发明名称 |
HIGH DENSITY FAN OUT PACKAGE STRUCTURE |
| 摘要 |
A high density fan out package structure may include a contact layer. The contact layer includes a conductive interconnect layer having a first surface facing an active die and a second surface facing a redistribution layer. The high density fan out package structure has a barrier layer on the first surface of the conductive interconnect layer. The high density fan out package structure may also include the redistribution layer, which has conductive routing layers. The conductive routing layers may be configured to couple a first conductive interconnect to the conductive interconnect layer. The high density fan out package structure may further include a first via coupled to the barrier liner and configured to couple with a second conductive interconnect to the active die. |
| 申请公布号 |
US2016126173(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514693820 |
申请日期 |
2015.04.22 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
KIM Dong Wook;WE Hong Bok;LEE Jae Sik;GU Shiqun |
| 分类号 |
H01L23/498;H01L21/48;H01L21/683;H01L23/00 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high density fan out package structure, comprising:
a contact layer including a conductive interconnect layer having a first surface facing an active die and a second surface facing a redistribution layer; a barrier liner on the first surface of the conductive interconnect layer; the redistribution layer comprising a plurality of conductive routing layers configured to couple a first conductive interconnect to the conductive interconnect layer; and a first via coupled to the barrier liner and configured to couple with a second conductive interconnect to the active die. |
| 地址 |
San Diego CA US |
