| 发明名称 |
METHOD FOR SYNTHESIS OF TRANSITION METAL CHALCOGENIDE |
| 摘要 |
Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness. |
| 申请公布号 |
US2016122868(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514932668 |
申请日期 |
2015.11.04 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
KIM Hyungjun;KIM YOUNGJUN;SONG Jeong-Gyu;PARK Jusang |
| 分类号 |
C23C16/30;H01L21/02;C23C16/52;C01G39/06;C23C16/455 |
主分类号 |
C23C16/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for synthesizing a transition metal chalcogenide, the method comprising:
supplying a precursor of the transition metal chalcogenide and a reactant on a substrate by atomic layer deposition to synthesize the transition metal chalcogenide having a predetermined synthesis thickness on the substrate, wherein the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness. |
| 地址 |
Seoul KR |
