| 发明名称 |
SILICON WAFER POLISHING COMPOSITION |
| 摘要 |
This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom. |
| 申请公布号 |
US2016122591(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414895318 |
申请日期 |
2014.05.02 |
| 申请人 |
FUJIMI INCORPORATED ;TOAGOSEI CO., LTD. |
发明人 |
TSUCHIYA Kohsuke;TANSHO Hisanori;ICHITSUBO Taiki;MORI Yoshio |
| 分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A silicon wafer polishing composition used in the presence of an abrasive, the composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water, wherein
the amide group-containing polymer has a building unit A in its main chain, the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, and the secondary amide group or tertiary amide group has a carbonyl carbon directly coupled to the main chain carbon atom. |
| 地址 |
Aichi JP |
