| 发明名称 |
RECESS FILLING METHOD AND PROCESSING APPARATUS |
| 摘要 |
There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess. |
| 申请公布号 |
US2016126103(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514919381 |
申请日期 |
2015.10.21 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUZUKI Daisuke;CHIBA Youichirou;YAMADA Takumi |
| 分类号 |
H01L21/285;H01L21/02;C30B29/06;H01L21/306;C30B1/02;H01L21/324;H01L21/768 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of filling a recess of a workpiece, the workpiece having a semiconductor substrate and an insulating film formed on the semiconductor substrate, the recess penetrating the insulating film and extending to an inside of the semiconductor substrate, the method comprising:
forming a first thin film made of a semiconductor material along a wall surface defining the recess in the semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess in the semiconductor substrate, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess. |
| 地址 |
Tokyo JP |
