RESISTIVE MEMORY DEVICE AND OPERATING METHOD

摘要

Provided are a resistive memory device including a plurality of memory cells, and a method of operating the resistive memory device. The resistive memory device includes a sensing circuit connected to a first signal line, to which a memory cell is connected, the sensing circuit sensing data stored in the memory cell based on a first reference current; and a reference time generator for generating a reference time signal that determines a time point when a result of the sensing is to be output, based on the first reference current.

主权项

1. A resistive memory device comprising:
a memory cell array including a memory cell connected to a first signal line and a second signal line; a sensing circuit connected to the first signal line, wherein the sensing circuit senses data stored in the memory cell based on a first reference current flowing through the first signal line; and a reference time generator that generates a reference time signal that determines a time at which the sensing of the stored data occurs based on the first reference current.