发明名称 FILM FORMING APPARATUS, FILM FORMING METHOD, AND RECORDING MEDIUM
摘要 A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.
申请公布号 US2016122872(A1) 申请公布日期 2016.05.05
申请号 US201514926017 申请日期 2015.10.29
申请人 TOKYO ELECTRON LIMITED 发明人 KATO Hitoshi;MIURA Shigehiro;KIKUCHI Hiroyuki;AIKAWA Katsuyoshi
分类号 C23C16/455;C23C16/52;C23C16/458 主分类号 C23C16/455
代理机构 代理人
主权项 1. A film forming apparatus of forming a thin film on a substrate by supplying a processing gas to the substrate, the film forming apparatus comprising: a rotary table disposed in a vacuum chamber and having a loading area formed at a first surface side of the rotary table, the rotary table configured to revolve the substrate loaded on the loading area; a rotation mechanism configured to rotate the loading area such that the substrate rotates around its axis; a processing gas supply mechanism configured to supply the processing gas to a processing gas supply area at the first surface side of the rotary table so that the thin film is formed on the substrate which repeatedly passes through the processing gas supply area for a plurality of times by the revolution of the substrate; and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.
地址 Tokyo JP