发明名称 |
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES |
摘要 |
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. |
申请公布号 |
US2016126381(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201414892821 |
申请日期 |
2014.05.22 |
申请人 |
WANG Shih-Yuan;WANG Shih-Ping |
发明人 |
WANG Shih-Yuan;WANG Shih-Ping |
分类号 |
H01L31/0352;H01L31/105;H01L31/107;H01L31/028 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Palo Alto CA US |