发明名称 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A display device is disclosed. In one aspect, the device includes a plurality of pixels. Each of the pixels includes a first thin-film transistor (TFT) formed over a substrate and comprising gate electrode, a source electrode, and a drain electrode. Each pixel also includes a storage capacitor formed over the substrate, wherein the storage capacitor includes first and second electrodes, and a dielectric layer interposed between the first and second electrodes. The first electrode, the dielectric layer, and the second electrode have substantially the same pattern.
申请公布号 US2016126262(A1) 申请公布日期 2016.05.05
申请号 US201514788408 申请日期 2015.06.30
申请人 Samsung Display Co., Ltd. 发明人 Tae Seunggyu
分类号 H01L27/12;H01L27/32;H01L49/02 主分类号 H01L27/12
代理机构 代理人
主权项 1. A display device comprising a plurality of pixels, each of the pixels comprising: a first thin-film transistor (TFT) formed over a substrate and comprising a gate electrode, a source electrode, and a drain electrode, wherein the TFT further comprises an active layer including a source region, a drain region, and a channel region between the source region and the drain region; and a storage capacitor formed over the substrate, wherein the storage capacitor includes a first electrode, a second electrode over the first electrode, and a dielectric layer interposed between the first and second electrodes, wherein the storage capacitor is formed over and overlaps the active layer of the first TFT in the depth dimension of the display device, and wherein the first electrode, the dielectric layer, and the second electrode have substantially the same pattern, and wherein the second electrode entirely covers the channel region.
地址 Yongin-City KR