| 主权项 |
1. A semiconductor device comprising:
a first semiconductor element; and a second semiconductor element electrically connected to the first semiconductor element by a first conductive member and a second conductive member, wherein a first electrode is arranged on a surface of the first semiconductor element, a second electrode is arranged on a surface of the second semiconductor element, the first conductive member has a first stack part stacked to the first semiconductor element to face the first electrode, and a first joint part extending from the first stack part, the second conductive member has a second stack part stacked to the second semiconductor element to face the second electrode, and a second joint part, the second joint part extending from the second stack part and facing the first joint part, the first electrode and the first stack part are bonded to each other by a first bonding layer, the second electrode and the second stack part are bonded to each other by a second bonding layer, the first joint part and the second joint part are bonded to each other by an intermediate bonding layer, an area of the intermediate bonding layer is smaller than both an area of the first bonding layer and an area of the second bonding layer when seen in a direction perpendicular to a bonded surface of the intermediate bonding layer, and a first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers. |
