SYSTEM AND METHOD FOR PERFORMING A WET ETCHING PROCESS

摘要

A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

主权项

1. A method for wet-etching a wafer having TSVs embedded beneath a surface of the wafer to produce, using a single wafer wet etching processing system that includes a plurality of stations, a processed wafer with each of the TSVs protruding a prescribed reveal height from the surface, the method comprising the steps of:
measuring, at a measurement station, an initial thickness of the wafer; etching, at a first etching station, the surface of the wafer according to a first etch recipe and using a first etchant to thin the wafer material and leave a layer of residual wafer material having a prescribed residual substrate material thickness (RST) above the TSVs, wherein the first etch recipe is based on the measured initial thickness; etching, at a second etching station, the surface of the wafer according to a second etch recipe using a second etchant to thin the wafer material such that a respective portion of each of the TSVs having the prescribed reveal height extend from the surface; and wherein the first and second etchants comprise different chemical compositions.