发明名称 PEDESTAL WITH MULTI-ZONE TEMPERATURE CONTROL AND MULTIPLE PURGE CAPABILITIES
摘要 Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.
申请公布号 US2016126118(A1) 申请公布日期 2016.05.05
申请号 US201614996621 申请日期 2016.01.15
申请人 Applied Materials, Inc. 发明人 Chen Xinglong;Yang Jang-Gyoo;Tam Alexander;Tam Elisha
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate support assembly comprising: a pedestal having a substrate support surface; a stem coupled with the pedestal opposite the substrate support surface, the stem including a pair of stem internal channels configured to deliver and receive a temperature controlled fluid to the pedestal; a fluid channel defined within a central region of the pedestal, the fluid channel coupled at an inlet section with, and configured to receive the temperature controlled fluid from, one of the pair of stem internal channels, coupled at an outlet section with, and configured to direct the temperature controlled fluid to, the other of the pair of stem internal channels, and including a first channel portion and a second channel portion between the inlet and the outlet sections, wherein the second channel portion is disposed vertically from and coupled in a parallel-reverse pattern with the first channel portion, and wherein the first and second channel portions are configured such that fluid received at the inlet section is directed through the first channel portion prior to flowing through the second channel portion and through the outlet section.
地址 Santa Clara CA US