METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

摘要

Provided is one embodiment which is a method for growing a β-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped β-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the β-Ga2O3-based single crystal, a shoulder of the β-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

主权项

1. A method for growing a β-Ga2O3-based single crystal, comprising:
contacting a flat plate-shaped seed crystal with a Ga2O3-based melt; and pulling up the seed crystal such that a flat plate-shaped β-Ga2O3-based single crystal comprising a principal surface that intersects a plane is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein, when growing the β-Ga2O3-based single crystal, a shoulder of the β-Ga2O3-based single crystal is widened only in a thickness direction thereof.