| 发明名称 |
FinFETs with Source/Drain Cladding |
| 摘要 |
A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions of the isolation regions, wherein the semiconductor fin is over top surfaces of the isolation regions. A gate stack overlaps the semiconductor fin. A source/drain region is on a side of the gate stack and connected to the semiconductor fin. The source/drain region includes an inner portion thinner than the semiconductor fin, and an outer portion outside the inner portion. The semiconductor fin and the inner portion of the source/drain region have a same composition of group IV semiconductors. |
| 申请公布号 |
US2016126343(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414527660 |
申请日期 |
2014.10.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Ching Kuo-Cheng;Fung Ka-Hing;Wu Zhiqiang |
| 分类号 |
H01L29/78;H01L29/165;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor substrate; isolation regions extending into the semiconductor substrate; a semiconductor fin between opposite portions of the isolation regions, wherein the semiconductor fin is over top surfaces of the isolation regions; a gate stack overlapping the semiconductor fin; and a source/drain region on a side of the gate stack and connected to the semiconductor fin, wherein the source/drain region comprises:
an inner portion thinner than the semiconductor fin, wherein the semiconductor fin and the inner portion of the source/drain region have a same composition of group IV semiconductors; andan outer portion outside the inner portion. |
| 地址 |
Hsin-Chu TW |
