TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF

摘要

Transistor structures and methods of fabricating transistor structures are provided. The methods include: fabricating a transistor structure at least partially within a substrate, the fabricating including: providing a cavity within the substrate; and forming a first portion and a second portion of the transistor structure at least partially within the cavity, the first portion being disposed at least partially between the substrate and the second portion, where the first portion inhibits diffusion of material from the second portion into the substrate. In one embodiment, the transistor structure is a field-effect transistor structure, and the first portion and the second portion include one of a source region or a drain region of the field-effect transistor structure. In another embodiment, the transistor structure is a bipolar junction transistor structure.

主权项

1. A method comprising:
fabricating a transistor structure at least partially within a substrate, the fabricating comprising:
providing a cavity within the substrate; andforming a first portion and a second portion of the transistor structure at least partially within the cavity, the first portion being disposed at least partially between the substrate and the second portion, wherein the first portion inhibits diffusion of material from the second portion into the substrate.