PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES

摘要

A memory device that includes a phase change material. The phase change material is programmable to a metastable set state and metastable reset state. Furthermore, the phase change material includes an initial state with an initial electrical resistance between the set electrical resistance and the reset electrical resistance. The initial state is at a lower potential energy than the set state and the reset state. Thus, the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time. The memory device also includes a first electrode electrically coupled to a first area of the phase change material, and a second electrode electrically coupled to a second area of the phase change material.

主权项

1. A memory device comprising:
a phase change material having an electrical resistance and programmable to a set state having a set electrical resistance and reset state having a reset electrical resistance at least a factor of 10 greater than the set electrical resistance, the phase change material including an initial state having an initial electrical resistance between the set electrical resistance and the reset electrical resistance, the initial state is at a lower potential energy than the set state and the reset state such that the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time; a first electrode electrically coupled to a first area of the phase change material; and a second electrode electrically coupled to a second area of the phase change material.