发明名称 FILM FORMING APPARATUS AND SHOWER HEAD
摘要 A film forming apparatus includes: a mounting table configured to place a substrate thereon and to be rotatable around an axis; a unit provided in a first region such that its bottom surface faces the mounting table and having first and second buffer spaces therein; and a flow rate controller that independently controls flow rates of a precursor gas supplied to the first and second buffer spaces. In the bottom surface, the unit includes: an inside injection section including injection ports communicated with the first buffer space and configured to inject the precursor gas supplied to the first buffer space; and an intermediate injection section including injection ports communicated with the second buffer space and configured to inject the precursor gas supplied to the second buffer space. All the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.
申请公布号 US2016122873(A1) 申请公布日期 2016.05.05
申请号 US201514922502 申请日期 2015.10.26
申请人 Tokyo Electron Limited 发明人 Iwasaki Masahide;Nozawa Toshihisa;Yamashita Kohei
分类号 C23C16/455;C23C16/458;C23C16/52 主分类号 C23C16/455
代理机构 代理人
主权项 1. A film forming apparatus comprising: a mounting table configured to place a substrate to be processed (“substrate”) thereon, and provided to be rotatable around an axis such that the substrate is moved around the axis; a shower head provided in one region among a plurality of regions, through which the substrate sequentially passes while moving in a circumferential direction around the axis due to rotation of the mounting table, such that a bottom surface of the shower head faces the mounting table, the shower head including at least a first buffer space and a second buffer space therein; and a flow rate controller configured to independently control a flow rate of a process gas to be supplied to each of the first buffer space and the second buffer space, wherein the shower head further includes, in the bottom surface thereof: a plurality of first injection ports communicated with the first buffer space and configured to downwardly inject the process gas supplied to the first buffer space; and a plurality of second injection ports communicated with the second buffer space and configured to downwardly inject the process gas supplied to the second buffer space, and all the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.
地址 Tokyo JP