发明名称 Deposition of LiCoO2
摘要 In accordance with the present invention, deposition of LiCoO 2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO 2 with a desired <101> or <003> orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCaO 2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700°C) anneal step that is conventionally needed to crystallize the LiCoO 2 layer. Some embodiments of the process can improve a battery utilizing the LiCoO 2 layer by utilizing a rapid thermal anneal process with short ramp rates.
申请公布号 EP1900845(B1) 申请公布日期 2016.05.04
申请号 EP20070120523 申请日期 2005.12.07
申请人 SAPURAST RESEARCH LLC 发明人 ZHANG, HONGMEI;DEMARAY, RICHARD E.;NEUDECKER, BERND J.
分类号 C23C14/58;C23C14/08;H01M4/04;H01M4/1391;H01M4/525;H01M6/18;H01M6/46;H01M10/052;H01M10/0562;H01M10/0585 主分类号 C23C14/58
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