发明名称 |
Deposition of LiCoO2 |
摘要 |
In accordance with the present invention, deposition of LiCoO 2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO 2 with a desired <101> or <003> orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCaO 2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700°C) anneal step that is conventionally needed to crystallize the LiCoO 2 layer. Some embodiments of the process can improve a battery utilizing the LiCoO 2 layer by utilizing a rapid thermal anneal process with short ramp rates. |
申请公布号 |
EP1900845(B1) |
申请公布日期 |
2016.05.04 |
申请号 |
EP20070120523 |
申请日期 |
2005.12.07 |
申请人 |
SAPURAST RESEARCH LLC |
发明人 |
ZHANG, HONGMEI;DEMARAY, RICHARD E.;NEUDECKER, BERND J. |
分类号 |
C23C14/58;C23C14/08;H01M4/04;H01M4/1391;H01M4/525;H01M6/18;H01M6/46;H01M10/052;H01M10/0562;H01M10/0585 |
主分类号 |
C23C14/58 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|