发明名称 |
III NITRIDE STRUCTURE AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR FINE COLUMNAR CRYSTAL |
摘要 |
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102,
wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film. |
申请公布号 |
EP2202329(B1) |
申请公布日期 |
2016.05.04 |
申请号 |
EP20080829248 |
申请日期 |
2008.08.27 |
申请人 |
SOPHIA SCHOOL CORPORATION |
发明人 |
KISHINO, KATSUMI;KIKUCHI, AKIHIKO |
分类号 |
C30B23/00;C30B29/40;C30B29/60;H01L21/02 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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