| 摘要 |
Embodiments provide a light emitting device including a substrate (180a), a light emitting structure (170) disposed under the substrate (180a), the light emitting structure (170) including a first conductive semiconductor layer (172), an active layer (174), and a second conductive semiconductor layer (176), a first electrode (142) configured to penetrate the second conductive semiconductor layer (176) and the active layer (174), so as to come into contact with the first conductive semiconductor layer (172), a contact layer (164) configured to come into contact with the second conductive semiconductor layer (176), a first insulation layer (152) disposed between the second conductive semiconductor layer (176) and the first electrode (142) and between the active layer (174) and the first electrode (142), the first insulation layer (152) being provided for capping of a side portion and an upper portion of the contact layer (164), and a second electrode (144) configured to penetrate the first insulation layer (152), so as to come into contact with the contact layer (164). The first insulation layer may be arranged as a double layer, of which the volume averaged coefficient of thermal expansion is matched to the coefficient of thermal expansion of the substrate. |
