摘要 |
A rectifying element includes a first electrode having a first work function, a second electrode having a second work function larger than the first work function, and a semiconductor layer having a third work function that is a value between the first work function and the second work function, and joined to the first electrode and the second electrode. Favorably, the semiconductor layer is set to have a thickness with which the semiconductor layer becomes fully depleted in a state where a bias voltage is not applied between the first electrode and the second electrode. Accordingly, the rectifying element that realizes a high-speed switching characteristic and sufficient rectification properties can be provided. |
申请人 |
THE UNIVERSITY OF ELECTRO-COMMUNICATIONS;NIHON DENGYO KOSAKU CO., LTD. |
发明人 |
NOZAKI, SHINJI;UCHIDA, KAZUO;KUROKAWA, SHINGO;FURUKAWA, MINORU;SHIRATO, TADASHI |