| 摘要 |
A method for improving, over a predetermined substrate area of a wafer (43), the uniformity and repeatability of the spectral response of photonic devices fabricated in a thin device layer of an SOI substrate. The method comprises establishing (22, 33) an initial device layer thickness map for the predetermined area; establishing (44, 33) a linewidth map for the predetermined area; establishing (44, 33) an etch depth map for the predetermined area; based on the initial device layer thickness map, the linewidth map and the etch depth map, determining (45) a predetermined device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account device design data; and performing (48) a location specific corrective etch process in accordance with the thickness correction map. A method according to the present invention can be implemented before (1) or after (2) photonic device fabrication. |
