The present invention relates to monolithic graphene oxide. More particularly, the monolithic graphene oxide comprises: a bottom layer including graphene oxide, having a flat structure; and an irregular structure formed on the bottom layer, including graphene oxide. A planar form of the irregular structure is a form of grain boundary of copper. In the graphene oxide in the bottom layer and in the irregular structure, the ratio of weight of oxygen in the graphene oxide to the weight of carbon in the graphene oxide is 0.1 to 10.0.
申请公布号
KR20160048754(A)
申请公布日期
2016.05.04
申请号
KR20160051269
申请日期
2016.04.27
申请人
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
发明人
KWON, SOON YONG;CHU, JAE HWAN;KWAK, JIN SUNG;KIM, SUNG YOUB;KIM, JI HYUN;PARK, KI BOG;LEE, ZONG HOON
