发明名称 |
FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR |
摘要 |
A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1). |
申请公布号 |
EP3016144(A1) |
申请公布日期 |
2016.05.04 |
申请号 |
EP20140816878 |
申请日期 |
2014.06.05 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
ZHANG, SHUO;RUI, QIANG;WANG, GENYI;DENG, XIAOSHE |
分类号 |
H01L29/739;H01L21/02;H01L21/336;H01L29/06;H01L29/08;H01L29/417 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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