| 摘要 |
A film capacitor is formed by stacking metalized films. In each metalized film, a metal electrode (2a, 2b; 2aA, 2bA; 2aB, 2bB) is formed on a surface of a dielectric film (1a, 1b; 1aA, 1bA; 1aB, 1bB). The dielectric film (1a, 1b; 1aA, 1bA; 1aB, 1bB) includes a high dielectric layer (3a, 3b; 3aA, 3bA; 3aB, 3bB), and a low dielectric layer (4a, 4b; 4aA, 4bA; 4aaB, 4baB, 4abB, 4bbB). The low dielectric layer (4a, 4b; 4aA, 4bA; 4aaB, 4baB, 4abB, 4bbB) is provided in at least one of a position between the high dielectric layer (3a, 3b; 3aA, 3bA; 3aB, 3bB) and the metal electrode (2a, 2b; 2aA, 2bA; 2aB, 2bB), and a position on an opposite side of the high dielectric layer (3a, 3b; 3aA, 3bA; 3aB, 3bB) from the metal electrode (2a, 2b; 2aA, 2bA; 2aB, 2bB). |
