| 摘要 |
A semiconductor device according to the present invention includes a pipe gate, a word line of multilayered structure formed on the upper part of the pipe gate, a first channel which includes a first pipe channel buried in the pipe gate and a first side channel which is connected to both sides of the first pipe channel and penetrates the word line, a second channel which includes a second pipe channel which is buried in the pipe gate and is located in the upper part of the first pipe channel and a second side channel which is connected to both sides of the second pipe channel and penetrates the word line, and an insulating pattern which is formed between the first pipe channel and the second pipe channel. So, parasitic capacitance can be reduced. |
