发明名称 |
MRAM element having improved data retention and low writing temperature |
摘要 |
A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature. |
申请公布号 |
US9331268(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201314405918 |
申请日期 |
2013.06.07 |
申请人 |
CROCUS TECHNOLOGY SA |
发明人 |
Prejbeanu Ioan Lucian;Dieny Bernard;Ducruet Clarisse;Lombard Lucien |
分类号 |
H01L29/82;H01L43/08;G11C11/16;H01L43/02 |
主分类号 |
H01L29/82 |
代理机构 |
Pearne & Gordon LLP |
代理人 |
Pearne & Gordon LLP |
主权项 |
1. A thermally assisted switching MRAM element comprising a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold;
the storage antiferromagnetic layer comprising at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; the first storage blocking temperature being below 200° C. and the second storage blocking temperature being above 250° C. |
地址 |
Grenoble FR |