Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence

摘要

In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).

主权项

1. Semiconductor layer sequence for an optoelectronic semiconductor chip having
at least three quantum wells which are arranged to generate electromagnetic radiation and are arranged one above the other in a direction of growth of the semiconductor layer sequence, a plurality of barrier layers, of which at least one barrier layer is arranged between two adjacent quantum wells in each case, wherein the quantum wells have a first average indium content and the barrier layers have a second, smaller, average indium content, a second average lattice constant of the barrier layers is smaller than a first average lattice constant of the quantum wells, the indium content is averaged over all quantum wells and/or barrier layers, the semiconductor layer sequence is based on (AlxGa1-X)1-yInyP, where 0