CMOS structure on replacement substrate

摘要

CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The method further includes removing the temporary substrate. The method further includes bonding a permanent electrically insulative substrate to the device with a bonding structure.

主权项

1. A structure comprising:
a planar device layer structure including a single planar device layer at a lowermost surface of the planar device layer structure; a planar adhesive layer; a planar permanent electrically insulative substrate layer attached to a lowermost surface of the single planar device layer by the planar adhesive layer; and a temporary handler wafer attached to an uppermost surface of the planar device layer structure by a releasable adhesive layer, wherein:
the planar device layer structure comprises one or more devices formed therein;the one or more devices are entirely contained between the lowermost surface of the planar device layer structure and the uppermost surface of the planar device layer structure;the substrate layer has a planar uppermost surface;the planar adhesive layer has a planar uppermost surface and a planar lowermost surface;the uppermost surface of the planar adhesive layer bonds directly to the lowermost surface of the single planar device layer;an interface of the planar adhesive layer and the lowermost surface of the single planar device layer is devoid of an oxide layer;the lowermost surface of the planar adhesive layer bonds directly to the uppermost surface of the substrate layer;the planar adhesive layer can withstand temperatures of up to about 350° C.; andthe single planar device layer and the permanent electrically insulative substrate have about a same coefficient of thermal expansion.