Semiconductor device and manufacturing method of semiconductor device

摘要

A semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

主权项

1. A semiconductor device comprising:
a first conductivity type transistor; and a second conductivity type transistor, wherein,
the first conductivity type and the second conductivity type are different from each other,each of the first conductivity type transistor and the second conductivity type transistors includes (i) a metal gate electrode comprising plurality of metal layers, and (ii) metal gate electrode side wall spacers,a distance between a side wall of the metal gate electrode of the first conductivity type transistor and a corresponding side wall spacer of the metal gate electrode of the first conductivity type transistor is greater than a distance between a side wall of the metal gate electrode of the second conductivity type transistor and a corresponding side wall spacer of the metal gate electrode of the second conductivity type transistor, anda gate length of the metal gate electrode of the first conductivity type transistor is different than a gate length of the metal gate electrode of the second conductivity type transistor.