Floating-gate transistor photodetector with light absorbing layer

摘要

A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.

主权项

1. An apparatus comprising:
a field effect transistor photodetector, comprising:
a source electrode,a drain electrode,a channel to allow an electric current to flow between the drain and source electrodes,a gate electrode to receive a bias voltage for controlling the current in the channel, anda light-absorbing material that absorbs light and traps electric charges, in which the light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges, and in which the one or more charges held in the light-absorbing material reduces the current flowing through the channel.