Memory cell array and variable resistive memory device including the same

摘要

A memory cell array includes a semiconductor substrate, a first word line formed on the semiconductor substrate, a second word line formed on the semiconductor substrate and extending substantially parallel to the first word line, a first inter-pattern insulating layer interposed between the first and second word lines, first active pillars formed within the first word line and arranged along the first word line at a first interval, and second active pillars formed within the second word lines, and arranged along the second word line to face the first active pillars, respectively, with the first inter-pattern insulating layer interposed therebetween.

主权项

1. A memory cell array, comprising:
a semiconductor substrate; a first word line formed on the semiconductor substrate; a second word line formed on the semiconductor substrate, and extending substantially parallel to the first word line; a first inter-pattern insulating layer interposed between the first and second word lines; first active pillars formed within the first word line, and arranged along the first word line at a first interval; and second active pillars formed within the second word line, and arranged along the second word line to face the first active pillars, respectively, with the first inter-pattern insulating layer interposed therebetween, wherein one side of each first active pillar is in contact with one side of the first inter-pattern insulating layer and one side of each second active pillar is in contact with the other side of the first inter-pattern insulating layer.