发明名称 |
P-contact and light-emitting diode for the ultraviolet spectral range |
摘要 |
The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer. |
申请公布号 |
US9331246(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201013384208 |
申请日期 |
2010.07.16 |
申请人 |
Forschungsverbund Berlin E.V. |
发明人 |
Kneissl Michael;Weyers Markus;Einfeldt Sven;Rodriguez Hernan |
分类号 |
H01L33/00;H01L33/38;H01L33/46 |
主分类号 |
H01L33/00 |
代理机构 |
Lewis Roca Rothgerber Christie LLP |
代理人 |
Lewis Roca Rothgerber Christie LLP |
主权项 |
1. A p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, the p-doped contact comprising:
a p-contact layer comprising AlGaN and having a first surface for contacting a radiation zone, and a second surface opposite the first surface; a coating covering 75%-96% of the second surface of the p-contact layer, the coating comprising a material having a maximum reflectivity of at least 60% for light in a UV range with a wavelength of 200 nm to 400 nm; and a plurality of p-injectors arranged on the second surface of the p-contact layer, the p-injectors comprising a p-injector metal layer and at least one other p-injector layer in direct contact with the p-injector metal layer, the at least one other p-injector layer comprising p-GaN or p-(In)GaN. |
地址 |
Berlin DE |