| 发明名称 | Optoelectronic device and method for manufacturing same | ||
| 摘要 | An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed. | ||
| 申请公布号 | US9331242(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201314438266 | 申请日期 | 2013.10.25 |
| 申请人 | ALEDIA;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENEREGIES ALTERNATIVES | 发明人 | Dechoux Nathalie;Amstatt Benoît;Gilet Philippe |
| 分类号 | H01L21/20;H01L21/36;H01L33/24;B82Y40/00;H01L21/02;H01L31/0352;H01L33/00;H01L33/08;H01L33/18;H01L31/0296;H01L31/0304;B82Y20/00;H01L31/0224;H01L31/028;H01L31/18;H01L33/38 | 主分类号 | H01L21/20 |
| 代理机构 | Howard IP Law Group, PC | 代理人 | Howard IP Law Group, PC |
| 主权项 | 1. A method of manufacturing an optoelectronic device comprising the successive steps of: providing a substrate; depositing a layer on the substrate; forming insulating blocks on the layer; etching portions of the layer, which are not covered with the insulating blocks to form pads on a surface of the substrate; forming a portion of the optoelectronic device, covering at least the lateral sides of each pad defining a dielectric region by oxidation or nitriding of the lateral sides of the pads and the substrate portions which are not covered with the pads; removing the insulating blocks; and forming semiconductor elements, each element resting on a pad, said dielectric portion comprising a material preventing the growth of the semiconductor elements on the lateral sides. | ||
| 地址 | FR | ||