Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.

主权项

1. A method for manufacturing a semiconductor light emitting device, comprising:
forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor; forming a first film of AlxGa1-xN (0.05≦x≦0.2) on the light emitting layer, the first film including Mg; forming a second film including a nitride semiconductor including Mg on the first film; and forming a third film including a nitride semiconductor including Mg on the second film, the forming of the first film including alternately and multiply repeating:
a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg; anda second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg, a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×1020 cm−3 and not more than 3×1020 cm−3, an Al concentration in the p-side region having a maximum value at a first position, the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer, a Mg concentration at the second position being not less than 2×1018 cm −3 .