Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

摘要

A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.

主权项

1. A manufacturing method of at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, the manufacturing method comprising:
providing a semiconducting substrate including a first face and a second face; forming a crystalline layer as a buffer layer, on the first face of the substrate, the buffer layer including a first zone in contact with the first face over at least part of a thickness of the buffer layer, the first zone being composed mainly of magnesium nitride in a form MgxNy, where x and y are positive numbers different from zero; and forming at least one semiconducting micro- or nano-wire on the buffer layer, at least one part of the micro- or nano-wire, as a contact part, composed mainly of a direct band gap semiconducting nitride, the contact part being a part of the micro- or nano-wire in contact with the buffer layer.