Oxide semiconductor film and semiconductor device,申请号US201514635199-传众专利搜索

发明名称	Oxide semiconductor film and semiconductor device
摘要	An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
申请公布号	US9331208(B2)	申请公布日期	2016.05.03
申请号	US201514635199	申请日期	2015.03.02
申请人	Semiconductor Energy Laboratory Co., Ltd.	发明人	Yamazaki Shunpei;Tsubuku Masashi;Akimoto Kengo;Ohara Hiroki;Honda Tatsuya;Omata Takatsugu;Nonaka Yusuke;Takahashi Masahiro;Miyanaga Akiharu
分类号	H01L29/88;H01L29/786;H01L29/04;H01L29/10	主分类号	H01L29/88
代理机构	Robinson Intellectual Property Law Office	代理人	Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项	1. An oxide semiconductor film comprising a crystalline region, wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1, and wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
地址	Kanagawa-ken JP