Oxide semiconductor device and manufacturing method therof

摘要

A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

主权项

1. A semiconductor device comprising:
a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film, the oxide semiconductor film including a channel formation region overlapping with the gate electrode; and a source electrode and a drain electrode over the oxide semiconductor film; and an insulating layer over the source electrode and the drain electrode, wherein the source electrode and the drain electrode each include a first metal film, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film, and wherein an end portion of the second metal film is offset from end portions of the first metal film and the third metal film from a center of the channel formation region.