| 发明名称 | High electron mobility transistor | ||
| 摘要 | A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes. | ||
| 申请公布号 | US9331154(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201414328241 | 申请日期 | 2014.07.10 |
| 申请人 | EPISTAR CORPORATION;HUGA OPTOTECH, INC | 发明人 | Chiu Hsien-Chin;Tung Chien-Kai;Lin Heng-Kuang;Yang Chih-Wei;Wang Hsiang-Chun |
| 分类号 | H01L29/66;H01L29/20;H01L29/417;H01L29/423;H01L29/778 | 主分类号 | H01L29/66 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A high electron mobility transistor, comprising: a substrate; an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region; a matrix electrode structure arranged in the first region comprising a plurality of first electrodes arranged on the epitaxial stack; a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes; a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes; a plurality of first bridges electrically connecting the plurality of second electrodes, wherein one of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes; and a plurality of second bridges electrically connecting the plurality of third electrodes. | ||
| 地址 | Hsinchu TW | ||