Multiple conductive layer TFT

摘要

A multiple layer pixel architecture for an active matrix display is provided in which a common bus line is formed on a metal level which is separate from that on which the gate electrodes of the thin-film transistors (TFTS) are formed. A multilayer electronic structure adapted to solution deposition, the structure includes a TFT for driving a pixel of an active matrix optoelectronic device and a capacitor for storing charge to maintain an electrical state of said active matrix pixel, wherein the structure includes a substrate bearing at least four conducting layers separeted by at least three dielectric layers, first and second ones of said conducting layers defining drain/source electrodes and a gate electrode of said transistor respectively, and third and fourth ones of said conducting layers defining respective first and second plates of said capacitor, and wherein said capacitor and said transistor are laterally positioned such that they overlap in a vertical direction.

主权项

1. A pixel drive structure for an active matrix display including a multilayer electronic structure, the multilayer electronic structure including:
a thin film transistor (TFT) for driving a pixel of said active matrix display and a capacitor for storing charge to maintain an electrical state of said active matrix pixel, wherein the multilayer electronic structure comprises a substrate bearing at least four conducting layers separated by at least three dielectric layers, first and second ones of said conducting layers defining drain/source electrodes and a gate electrode of said transistor respectively, and third and fourth ones of said conducting layers defining respective first and second plates of said capacitor, wherein said first and second plates of said capacitor and said gate electrode of said transistor are laterally positioned such that they overlap in a vertical direction, wherein an upper one of said conducting layers defines a pixel pad layer comprising a pixel pad connected to said first conducting layer of said thin film transistor for driving said pixel of said active matrix display; wherein said pixel pad forms said second plate of said capacitor, wherein said third conducting layer comprises said first plate of said capacitor which covers at least half the area of a pixel pad surface closest to the third conducting layer; wherein said third conducting layer is between said fourth conducting layer and said second conducting layer; and further wherein a channel region of said TFT comprises an organic semiconducting material.