发明名称 |
Semiconductor structure and manufacturing method thereof |
摘要 |
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask with the second mask; defining a second doped region through an opening of the second mask; and stripping the first mask and the second mask from the substrate. The present disclosure provides a semiconductor structure, including a substrate having a top surface; a first doped region having a first surface; and a second doped region having a second surface. The first surface and the second surface are coplanar with the top surface of the substrate. Either of the doped regions has a monotonically decreasing doping profile from the top surface of the substrate to a bottom of the doped region. |
申请公布号 |
US9331081(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201314068646 |
申请日期 |
2013.10.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Lin Chun-Ming;Chung Chiu-Hua;Lin Yu-Shine;Lai Bor-Wen;Lee Tsung-Lin |
分类号 |
H01L21/76;H01L21/82;H01L27/092;H01L29/66;H01L21/8238 |
主分类号 |
H01L21/76 |
代理机构 |
WPAT, P.C., Intellectual Property Attorneys |
代理人 |
WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
主权项 |
1. A method of manufacturing a semiconductor structure, comprising:
forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask with the second mask; defining a second doped region through an opening of the second mask, the opening of the second mask simultaneously exposing the underlying first mask; and stripping the first mask and the second mask from the substrate. |
地址 |
Hsinchu TW |