发明名称 Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof
摘要 Wafer to carrier adhesion without mechanical adhesion for formation of an IC. In such formation, an apparatus has a bottom surface of a substrate abutting a top surface of a support platform without adhesive therebetween. A material is disposed around the substrate and on the top surface of the support platform. The material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface.
申请公布号 US9330954(B2) 申请公布日期 2016.05.03
申请号 US201314087114 申请日期 2013.11.22
申请人 Invensas Corporation 发明人 Haba Belgacem;Mohammed Ilyas
分类号 H01L21/48;H01L21/683;H01L23/522 主分类号 H01L21/48
代理机构 代理人
主权项 1. A method, comprising: placing a substrate on a top surface of a support platform; wherein a bottom surface of the substrate abuts the top surface of the support platform after placement without adhesive between the bottom surface and the top surface; depositing a material over and around the substrate and on the top surface of the support platform; wherein the material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface without adhesive therebetween; removing an upper portion of the material; thinning the substrate including removing more of the material; back-end-of-line processing the substrate including forming one or more inter-level dielectrics and one or more levels of metallization; and dicing the substrate to provide dies.
地址 San Jose CA US