发明名称 |
Plasma etching method and semiconductor device manufacturing method |
摘要 |
A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas. |
申请公布号 |
US9330930(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201514615725 |
申请日期 |
2015.02.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Kubota Kazuhiro;Honda Masanobu;Katsunuma Takayuki |
分类号 |
H01L21/302;H01L21/3065;H01J37/32;H01L21/311;H01L21/768;H01L21/66;H01L21/308 |
主分类号 |
H01L21/302 |
代理机构 |
IPUSA, PLLC |
代理人 |
IPUSA, PLLC |
主权项 |
1. A plasma etching method for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply rate adjustment unit for adjusting a supply rate of etching gas supplied to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply rate adjustment unit and the stage, the plasma etching method comprising:
a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate at a first temperature; and an adjustment step in which the supply rate adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within a space above the substrate, wherein the adjustment step adjusts the supply rate of the etching gas according to whether a supply region on the substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas. |
地址 |
Tokyo JP |