Method for forming control gate salicide

摘要

A method for forming a semiconductor device includes forming a conductive structure of a silicon material on a substrate and forming a planarized dielectric layer adjacent the conductive structure. The method also includes removing a portion of the dielectric layer to expose a top portion of the conductive structure and removing an outer portion of the exposed top portion of the conductive structure such that the top portion of the gate structure has a narrower width than the unexposed portion. The method further includes forming a metal layer over the exposed portion of the gate structure and a top surface of the dielectric layer, and forming a silicide layer over the top portion of the conductive structure. The width of the silicided top portion of the conductive structure is substantially the same as the width of the bottom portion of the conductive structure.

主权项

1. A method for forming a semiconductor device, comprising:
forming a control gate structure of a silicon material on a substrate; forming a planarized dielectric layer adjacent the control gate structure; removing a portion of the dielectric layer to expose a top portion of the control gate structure; removing an outer portion of the exposed top portion of the control gate structure such that the top portion of the control gate structure has a narrower width than the unexposed portion; forming a metal layer over the exposed portion of the control gate structure and a top surface of the dielectric layer; and forming a silicide layer over the top portion of the control gate structure, such that the width of the silicided top portion of the control gate structure is substantially the same as the width of the bottom portion of the control gate structure.