发明名称 Lower electrode for piezoelectric element, and piezoelectric element provided with lower electrode
摘要 In the present invention, a half-value width of a rocking curve, an average roughness of a surface, and an average grain diameter are all specified at one time with respect to a Pt layer that constitutes a lower electrode for a piezoelectric element, thereby stably film-forming the Pt layer having excellent characteristics, and stably forming, on the Pt layer, a piezoelectric thin film having excellent characteristics.
申请公布号 US9331605(B2) 申请公布日期 2016.05.03
申请号 US201214119779 申请日期 2012.05.09
申请人 KONICA MINOLTA, INC. 发明人 Shibuya Kazuki
分类号 H01L41/047;H02N2/00;H01L41/29;H01L41/319;H01L41/08 主分类号 H01L41/047
代理机构 Cozen O'Connor 代理人 Cozen O'Connor
主权项 1. A lower electrode for a piezoelectric element, which acts as a lower electrode underlying a piezoelectric thin film formed over a substrate, comprising: a Pt layer, wherein with respect to the Pt layer, a full width at half maximum of a rocking curve in X-ray diffraction of a (111) plane of Pt is not more than 2.2°, a surface roughness thereof satisfies at least one of following: a root-mean-square roughness RMS of not more than 1.0 nm, and an arithmetic mean roughness Ra of not more than 0.8 nm, and an average grain size of Pt is not less than 200 nm.
地址 Tokyo JP
您可能感兴趣的专利