One transistor and one resistive random access memory (RRAM) structure with spacer

摘要

The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode; a spacer surrounding the capping layer; and, a top electrode on the capping layer having a smaller width than the resistive material layer. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.

主权项

1. A resistive random access memory (RRAM) cell, comprising:
a transistor; an RRAM structure electrically coupled to the transistor, the RRAM structure having
a bottom electrode having a via portion and a top portion, wherein said via portion of the bottom electrode is embedded in a first RRAM stop layer;a resistive material layer on the bottom electrode having a width that is substantially the same as a width of the top portion of the bottom electrode;a capping layer on and physically contacting the resistive material layer having a smaller width than the resistive material layer;a spacer surrounding the capping layer;a top electrode on the resistive material layer having a width that is same as the capping layer and a thickness larger than the capping layer;a second RRAM stop layer having a first portion disposed over the first RRAM stop layer, the second RRAM stop layer having a second portion laterally surrounding the top electrode, the spacer, the resistive material layer, and the bottom electrode; anda dielectric layer over the first portion of the second RRAM stop layer and laterally surrounding the second portion of the second RRAM stop layer, the dielectric layer and the second RRAM stop layer differing in composition; and a conductive material connecting the top electrode of the RRAM structure to a metal layer.