Variable resistance memory device and method of manufacturing the same

摘要

A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor.

主权项

1. A method of manufacturing a variable resistance memory device, the method comprising:
forming a plurality of vertical transistors extending from a surface of a semiconductor substrate in a direction perpendicular to the length and the width of the semiconductor substrate, each of the plurality of vertical transistors including a pillar and a gate surrounding a lower portion of the pillar; forming a first spacer and a second spacer on a side wall of the pillar; forming an insulating layer between the plurality of vertical transistors; defining a space by removing the second spacer and an upper portion of the insulating layer; and providing a conductive material in the space to form a shunt gate.