发明名称 Integrated capacitor
摘要 A structure includes first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending away from the first conductive midrib. The third conductive leaf structure includes a third conductive midrib between the first conductive midrib and the second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending toward the second conductive midrib.
申请公布号 US9331013(B2) 申请公布日期 2016.05.03
申请号 US201313902575 申请日期 2013.05.24
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yen Hsiao-Tsung;Luo Cheng-Wei;Huang Jun-Cheng;Kuo Chin-Wei;Jeng Min-Chie
分类号 H01L49/02;H01L23/522 主分类号 H01L49/02
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A structure comprising: a first conductive port; a second conductive port electrically isolated from and capacitively coupled to the first conductive port; a first conductive feature formed in a first conductive layer, the first conductive feature comprising: a first conductive line extending perpendicularly from the first conductive port,at least two first conductive stubs extending perpendicularly from the first conductive line in a first direction, andat least two second conductive stubs extending perpendicularly from the first conductive line in a second direction antiparallel to the first direction, the at least two second conductive stubs staggered with the at least two first conductive stubs along the first conductive line; a second conductive feature formed in the first conductive layer, the second conductive feature comprising: a second conductive line extending perpendicularly from the second conductive port,at least two third conductive stubs extending perpendicularly from the second conductive line in the first direction, andat least two fourth conductive stubs extending perpendicularly from the second conductive line in the second direction, the at least two fourth conductive stubs staggered with the at least two third conductive stubs along the second conductive line; a third conductive feature formed in a second conductive layer over the first conductive layer, the third conductive feature comprising: a third conductive line extending perpendicularly from the second conductive port, the third conductive line aligned with the first conductive line,at least two fifth conductive stubs extending perpendicularly from the third conductive line in the first direction, the fifth conductive stubs aligned with the first conductive stubs, andat least two sixth conductive stubs extending perpendicularly from the third conductive line in the second direction, the sixth conductive stubs aligned with the second conductive stubs; and a fourth conductive feature formed in the second conductive layer, the fourth conductive feature comprising: a fourth conductive line extending perpendicularly from the first conductive port, the fourth conductive line aligned with the second conductive line,at least two seventh conductive stubs extending perpendicularly from the second conductive line in the first direction, the seventh conductive stubs aligned with the third conductive stubs, andat least two eighth conductive stubs extending perpendicularly from the second conductive line in the second direction, the eighth conductive stubs aligned with the fourth conductive stubs.
地址 Hsin-Chu TW