| 发明名称 |
Semiconductor device and manufacturing method |
| 摘要 |
Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed. |
| 申请公布号 |
US9331155(B2) |
申请公布日期 |
2016.05.03 |
| 申请号 |
US201414249108 |
申请日期 |
2014.04.09 |
| 申请人 |
NXP B.V. |
发明人 |
Donkers Johannes;Broekman Hans;Heil Stephan;De Keijser Mark;van der Schaar Cecilia |
| 分类号 |
H01L49/02;H01L29/205;H01L21/285;H01L29/45;H01L29/47;H01L29/66;H01L29/778;H01L29/20 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
Madnawat Rajeev |
| 主权项 |
1. A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer on the metal,
wherein the metal is nickel, wherein the first contact is laterally delimited by an electrically insulating material, wherein the semiconductor device comprises a further contact that is entirely laterally separated from the first contact by the electrically insulating material such that the first contact and the further contact are electrically insulated from each other, the further contact comprising a Ti/Al metallization stack in contact with the at least one active layer and a TiW(N) layer on the Ti/Al metallization stack, wherein the first contact is a Schottky contact and the further contact is an ohmic contact. |
| 地址 |
Eindhoven NL |
