System, method and apparatus for generating pressure pulses in small volume confined process reactor

摘要

A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

主权项

1. A plasma processing system comprising:
a processing chamber; at least one gas source coupled to the processing chamber; a controller coupled to the processing chamber and the at least one gas source; the processing chamber including:
a top electrode disposed within a top portion of the processing chamber;a substrate support disposed opposite from the top electrode;a plasma processing volume having a volume less than a volume of the processing chamber, the plasma processing volume being defined by:
a surface of the top electrode;a supporting surface of the substrate support opposing the surface of the top electrode; anda plasma confinement structure enclosing an outer perimeter of the plasma processing volume, the plasma confinement structure includes a plurality of equally distributed openings disposed in a horizontal portion of the plasma confinement structure; anda conductance control structure disposed adjacent to the plasma confinement structure, the conductance control structure being movably disposed proximate to the plurality of equally distributed openings,wherein the conductance control structure restricts an outlet flow through the plurality of equally distributed openings when disposed in a first position to a first flow rate and wherein the conductance control structure increases the outlet flow through the plurality of equally distributed openings when disposed in a second position to a second flow rate,wherein the conductance control structure is movable between the first position and the second position corresponding to a selected processing state set by the controller during a plasma process.